mcl103a / 103b / 103c document number 85632 rev. 1.4, 27-jan-06 vishay semiconductors www.vishay.com 1 9612315 small signal schottky diodes features ? integrated protection ring against static discharge ? low capacitance ? low leakage current ? low forward voltage drop ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? ihf-detector ? protection circuit ? small battery charger ? ac-dc / dc-dc converters mechanical data case: micromelf glass case weight: approx. 12 mg cathode band color: black packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks mcl103a v r = 40 v, v f at i f 20 ma max. 0.37 v mcl103a-gs18 or mcl103a-gs08 tape and reel mcl103b v r = 30 v, v f at i f 20 ma max. 0.37 v mcl103b-gs18 or MCL103B-GS08 tape and reel mcl103c v r = 20 v, v f at i f 20 ma max. 0.37 v mcl103c-gs18 or mcl103c-gs08 tape and reel parameter test condition part symbol value unit reverse voltage mcl103a v r 40 v mcl103b v r 30 v mcl103c v r 20 v peak forward surge current t p = 300 s, square pulse i fsm 15 a power dissipation l = 4 mm, t l = constant p tot 400 mw parameter test condition symbol value unit junction ambient l = 4 mm, t l = constant r thja 250 k/w junction temperature t j 125 c storage temperature range t stg - 65 to + 150 c e2
www.vishay.com 2 document number 85632 rev. 1.4, 27-jan-06 mcl103a / 103b / 103c vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 10 a mcl103a v (br)r 40 v mcl103b v (br)r 30 v mcl103c v (br)r 20 v leakage current v r = 30 v mcl103a i r 5a v r = 20 v mcl103b i r 5a v r = 10 v mcl103c i r 5a forward voltage drop i f = 20 ma v f 0.37 v i f = 200 ma v f 0.6 v diode capacitance v r = 0 v, f = 1 mhz c d 50 pf reverse recovery time i f = i r = 50 to 200 ma, recover to 0.1 i r t rr 10 ns figure 1. forward current vs. forward voltage figure 2. forward current vs. forward voltage i ? for w ard c u rrent (ma) 0 100 200 300 400 500 600 700 8 00 900 1000 v f ? for w ard v oltage (m v ) 16765 f 1000 100 10 1 0.1 0.01 0.001 i?for w ard c u rrent (a) 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 v f ? for w ard v oltage ( v ) 16766 f figure 3. reverse current vs. junction temperature figure 4. diode capacitance vs. reverse voltage 1 10 100 1000 10000 0 204060 8 0 100 120 140 160 t j ?j u nction temperat u re (c) 16767 i?re v erse c u rrent (a) r 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v r ?re v erse v oltage ( v ) 1676 8 c ? diode capacitance (pf) d f = 1 mhz
mcl103a / 103b / 103c document number 85632 rev. 1.4, 27-jan-06 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. typ. non repetitive forward surge current vs. pulse width 0 5 10 15 20 25 0.1 1.0 10.0 t p ?p u lse w idth (ms) 16769 i? typ. n on repetit v e for w ard s u rge c u rrent (a) tot iso method e 9612072 2 (0.047) 2.4 (0.094) 2.8 (0.109) 8 (0.031) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) reflow soldering wave soldering 0.8 (0.031) 1.0 (0.039) 1.4 (0.055) cathode indification 1 (0.04) surface plan 2.0 (0.078) 1.8 (0.070) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) glass case micromelf glass < 1.35 (0.05) > r 2.5 (0.10) glass 0.6 (0.02) surface plan
www.vishay.com 4 document number 85632 rev. 1.4, 27-jan-06 mcl103a / 103b / 103c vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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